- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98035 > MPSW51ARL (ON SEMICONDUCTOR) 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號： | MPSW51ARL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 21/34頁 |
| 文件大小： | 320K |
| 代理商： | MPSW51ARL |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當(dāng)前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
Reliability and Quality Assurance
9–16
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MECHANICAL SHOCK
This test is used to determine the ability of the device to
withstand a sudden change in mechanical stress due to abrupt
changes in motion as seen in handling, transportation, or
actual use.
Typical Test Conditions: Acceleration = 1500 g’s, Orienta-
tion = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5
Common Failure Modes: Open, short, excessive leak-
age, mechanical failure
Common Failure Mechanisms: Die and wire bonds,
cracked die, package defects
Military Reference: MIL–STD–750, Method 2015
MOISTURE RESISTANCE
The purpose of this test is to evaluate the moisture resistance
of components under temperature/humidity conditions typical
of tropical environments.
Typical Test Conditions: TA = –10°C to 65°C, rh = 80%
to 98%, t = 24 hours/cycles, cycle = 10
Common Failure Modes: Parametric shifts in leakage
and mechanical failure
Common Failure Mechanisms: Corrosion or contami-
nants on or within the package materials. Poor package
sealing
Military Reference: MIL–STD–750, Method 1021
SOLDERABILITY
The purpose of this test is to measure the ability of the device
leads/terminals to be soldered after an extended period of
storage (shelf life).
Typical Test Conditions: Steam aging = 8 hours, Flux =
R, Solder = Sn60, Sn63
Common Failure Modes: Pin holes, dewetting, nonwet-
ting
Common Failure Mechanisms: Poor plating, contami-
nated leads
Military Reference: MIL–STD–750, Method 2026
SOLDER HEAT
This test is used to measure the ability of a device to withstand
the temperatures as may be seen in wave soldering
operations. Electrical testing is the endpoint critierion for this
stress.
Typical Test Conditions: Solder Temperature = 260
°C, t
= 10 seconds
Common Failure Modes: Parameter shifts, mechanical
failure
Common Failure Mechanisms: Poor package design
Military Reference: MIL–STD–750, Method 2031
STEADY STATE OPERATING LIFE (SSOL)
The purpose of this test is to evaluate the bulk stability of the
die and to generate defects resulting from manufacturing
aberrations
that
are
manifested
as
time
and
stress–dependent failures.
Typical Test Conditions: TA = 25°C, PD = Data Book
maximum rating, t = 16 to 1000 hours
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Foreign material, crack
die, bulk die, metallization, wire and die bond defects
Military Reference: MIL–STD–750, Method 1026
TEMPERATURE CYCLING (AIR TO AIR)
The purpose of this test is to evaluate the ability of the device
to withstand both exposure to extreme temperatures and
transitions between temperature extremes. This testing will
also expose excessive thermal mismatch between materials.
Typical Test Conditions: TA = –65°C to 200°C, cycle =
10 to 4000
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Wire bond, cracked or
lifted die and package failure
Military Reference: MIL–STD–750, Method 1051
THERMAL SHOCK (LIQUID TO LIQUID)
The purpose of this test is to evaluate the ability of the device
to withstand both exposure to extreme temperatures and
sudden transitions between temperature extremes. This
testing will also expose excessive thermal mismatch between
materials.
Typical Test Conditions: TA = 0°C to 100°C, cycle = 20
to 300
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Wire bond, cracked or
lifted die and package failure
Military Reference: MIL–STD–750, Method 1056
VARIABLE FREQUENCY VIBRATION
This test is used to examine the ability of the device to
withstand deterioration due to mechanical resonance.
Typical Test Conditions: Peak acceleration = 20 g’s,
Frequency range = 20 Hz to KHz, t = 48 minutes
Common Failure Modes: Open, short, excessive leak-
age, mechanical failure
Common Failure Mechanisms: Die and wire bonds,
cracked die, package defects
Military Reference: MIL–STD–750, Method 2056
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSW51RLRM | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RL | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RLRE | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARLRE | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARLRM | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW51ARLRA | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRAG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRP | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRPG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51G | 功能描述:兩極晶體管 - BJT 1A 40V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。