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| 型號(hào)： | MPSW51AZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AE, 3 PIN |
| 文件頁(yè)數(shù)： | 12/34頁(yè) |
| 文件大小： | 320K |
| 代理商： | MPSW51AZL1 |
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MPSW51 MPSW51A
2–705
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –1000 mAdc, VCE = –1.0 Vdc)
hFE
55
60
50
—
Collector – Emitter Saturation Voltage
(IC = –1000 mAdc, IB = –100 mAdc)
VCE(sat)
—
–0.7
Vdc
Base – Emitter On Voltage
(IC = –1000 mAdc, VCE = –1.0 Vdc)
VBE(on)
—
–1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
30
pF
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
–1000
–10
IC, COLLECTOR CURRENT (mA)
200
100
70
IB, BASE CURRENT (mA)
–5.0
–50
–0.6
–0.2
0
–100
–500
–1.0
IC, COLLECTOR CURRENT (mA)
0
–1.0
–0.8
–0.6
–0.4
–0.2
IC, COLLECTOR CURRENT (mA)
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
–200
h
FE
,CURRENT
GAIN
,COLLECT
OR
VOL
TAGE
(VOL
TS)
V
,VOL
TAGE
(VOL
TS)
50
20
–100
–20
–50
–200
–500
–10 –20
–0.05 –0.1 –0.2
–2.0
–0.4
–0.8
–1.0
–2.0
–5.0
–10
–20
–50
TJ = 25°C
VBE(SAT) @ IC/IB = 10
–0.01
–0.5 –1.0
–0.02
–100
V
CE
–1000
–100
–500
–1.0
–200
–2.0
–5.0
–10
–20
–50
qVB for VBE
–1000
q
V
°
VCE = –1.0 V
TJ = 25°C
VCE(SAT) @ IC/IB = 10
VBE(ON) @ VCE = –1.0 V
TJ = 25°C
IC =
–100
mA
IC =
–50 mA
IC =
–1000 mA
IC =
–10 mA
IC =
–500 mA
IC =
–250
mA
,TEMPERA
TURE
COEFFICIENT
(mV/
C)
B
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