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參數資料
型號: MPSW51RL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AE, 3 PIN
文件頁數: 1/34頁
文件大小: 320K
代理商: MPSW51RL1
2–704
Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPSW51
MPSW51A
VCEO
–30
–40
Vdc
Collector – Base Voltage
MPSW51
MPSW51A
VCBO
–40
–50
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW51
MPSW51A
V(BR)CEO
–30
–40
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPSW51
MPSW51A
V(BR)CBO
–40
–50
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
MPSW51
(VCB = –40 Vdc, IE = 0)
MPSW51A
ICBO
–0.1
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
–0.1
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPSW51
MPSW51A
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
相關PDF資料
PDF描述
MPSW51AZL1 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW51ZL1 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW63ZL1 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW63RLRE 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RLRA 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關代理商/技術參數
參數描述
MPSW51RLRAG 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Current Transistors
MPSW55 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW55_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Amplifier Transistors
MPSW55G 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW55RLRA 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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