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參數資料
| 型號： | MPSW51RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AE, 3 PIN |
| 文件頁數： | 30/34頁 |
| 文件大小： | 320K |
| 代理商： | MPSW51RLRE |
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Tape and Reel Specifications
6–2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Tape and Reel Specifications
and Packaging Specifications
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the “peel–back” cover tape.
Two Reel Sizes Available (7″ and 13″)
Used for Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481, –1, –2
SOD–123, SC–59, SC–70/SOT–323, SC–70ML/SOT–363,
SOT–23, TSOP–6, in 8 mm Tape
SOT–223 in 12 mm Tape
SO–14, SO–16 in 16 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
OF FEED
DIRECTION
SC–59, SC–70/SOT–323, SOT–23
8 mm
12 mm
SOT–223
SOD–123
16 mm
SO–14, 16
SC–70ML/SOT–363, TSOP–6
T1 ORIENTATION
8 mm
SC–70ML/SOT–363
T2 ORIENTATION
8 mm
EMBOSSED TAPE AND REEL ORDERING INFORMATION
Package
Tape Width
(mm)
Pitch
mm
(inch)
Reel Size
mm
(inch)
Devices Per Reel
and Minimum
Order Quantity
Device
Suffix
SC–59
8
4.0
± 0.1 (.157 ± .004)
178
(7)
3,000
T1
SC–70/SOT–323
8
4.0
± 0.1 (.157 ± .004)
178
(7)
3,000
T1
8
330
(13)
10,000
T3
SO–14
16
8.0
± 0.1 (.315 ± .004)
178
(7)
500
R1
16
330
(13)
2,500
R2
SO–16
16
8.0
± 0.1 (.315 ± .004)
178
(7)
500
R1
16
330
(13)
2,500
R2
SOD–123
8
4.0
± 0.1 (.157 ± .004)
178
(7)
3,000
T1
8
330
(13)
10,000
T3
SOT–23
8
4.0
± 0.1 (.157 ± .004)
178
(7)
3,000
T1
8
330
(13)
10,000
T3
SOT–223
12
8.0
± 0.1 (.315 ± .004)
178
(7)
1,000
T1
12
330
(13)
4,000
T3
SC–70ML/SOT–363
8
4.0
± 0.1 (.157 ± .004)
178
(7)
3,000
T1
8
178
(7)
3,000
T2
TSOP–6
8
4.0
± 0.1 (.157 ± .004)
178
(7)
3,000
T1
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| MPSW51RL1 | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51AZL1 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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參數描述 |
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| MPSW55 | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Amplifier Transistors |
| MPSW55G | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55RLRA | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55RLRAG | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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