欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MPSW51ZL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AE, 3 PIN
文件頁數: 12/34頁
文件大小: 320K
代理商: MPSW51ZL1
MPSW51 MPSW51A
2–705
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –1000 mAdc, VCE = –1.0 Vdc)
hFE
55
60
50
Collector – Emitter Saturation Voltage
(IC = –1000 mAdc, IB = –100 mAdc)
VCE(sat)
–0.7
Vdc
Base – Emitter On Voltage
(IC = –1000 mAdc, VCE = –1.0 Vdc)
VBE(on)
–1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)
fT
50
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
30
pF
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
–1000
–10
IC, COLLECTOR CURRENT (mA)
200
100
70
IB, BASE CURRENT (mA)
–5.0
–50
–0.6
–0.2
0
–100
–500
–1.0
IC, COLLECTOR CURRENT (mA)
0
–1.0
–0.8
–0.6
–0.4
–0.2
IC, COLLECTOR CURRENT (mA)
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
–200
h
FE
,CURRENT
GAIN
,COLLECT
OR
VOL
TAGE
(VOL
TS)
V
,VOL
TAGE
(VOL
TS)
50
20
–100
–20
–50
–200
–500
–10 –20
–0.05 –0.1 –0.2
–2.0
–0.4
–0.8
–1.0
–2.0
–5.0
–10
–20
–50
TJ = 25°C
VBE(SAT) @ IC/IB = 10
–0.01
–0.5 –1.0
–0.02
–100
V
CE
–1000
–100
–500
–1.0
–200
–2.0
–5.0
–10
–20
–50
qVB for VBE
–1000
q
V
°
VCE = –1.0 V
TJ = 25°C
VCE(SAT) @ IC/IB = 10
VBE(ON) @ VCE = –1.0 V
TJ = 25°C
IC =
–100
mA
IC =
–50 mA
IC =
–1000 mA
IC =
–10 mA
IC =
–500 mA
IC =
–250
mA
,TEMPERA
TURE
COEFFICIENT
(mV/
C)
B
相關PDF資料
PDF描述
MPSW63ZL1 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW63RLRE 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RLRA 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RLRE 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RL 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關代理商/技術參數
參數描述
MPSW55 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW55_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Amplifier Transistors
MPSW55G 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW55RLRA 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW55RLRAG 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 茶陵县| 汶川县| 元氏县| 广南县| 霸州市| 诸暨市| 上高县| 左权县| 青阳县| 武乡县| 河北省| 盐津县| 宁化县| 北辰区| 卢氏县| 伊宁县| 怀宁县| 八宿县| 凤城市| 洞口县| 清苑县| 江华| 南漳县| 南澳县| 合山市| 岑巩县| 隆子县| 临汾市| 和硕县| 容城县| 奇台县| 佛山市| 禹城市| 福州市| 巴马| 莱西市| 临海市| 大宁县| 三门峡市| 广宁县| 泉州市|