欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MPSW63ZL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AE, 3 PIN
文件頁數: 12/34頁
文件大小: 337K
代理商: MPSW63ZL1
MPSW63 MPSW64
2–711
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPSW63
MPSW64
(IC = –100 mAdc, VCE = –5.0 Vdc)
MPSW63
MPSW64
hFE
5,000
10,000
20,000
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –0.1 mAdc)
VCE(sat)
–1.5
Vdc
Base–Emitter On Voltage
(IC = –100 mAdc, VCE = –5.0 Vdc)
VBE(on)
–2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
125
MHz
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| ftest.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
–1.0
–2.0
–0.5
IC, COLLECTOR CURRENT (mA)
200
50
5.0
3.0
2.0
–1.0
–100
–0.3
IC, COLLECTOR CURRENT (mA)
–1.6
–2.0
–0.8
–0.4
0
IB, BASE CURRENT (mA)
–0.6
–30
h
FE
,DC
CURRENT
GAIN
(X1.0
k)
V
,VOL
TAGE
(VOL
TS)
–10
–20
–7.0
–100
–200
–50
70
–3.0 –5.0
–10
–50
–2.0
–1.6
–1.4
–1.2
–1.0
–30
–70
–300
–5.0
–3.0
–0.7
30
100
–300
–1.2
–0.3
–100
–0.1
–1.0 –3.0
–10
–30
–300
–1 k
V
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
CE
–0.3
10
7.0
20
–0.5
–3 k –10 k
–0.8
–1.8
TJ = 25°C
IC = –10 mA
–50 mA –100 mA –175 mA
–300 mA
TJ = 25°C
IC/IB = 100
TJ = 125°C
25
°C
–55
°C
–10 V
VCE = –2.0 V
–5.0 V
VBE(sat) @ IC/IB = 100
VCE(sat) @ IC/IB = 1000
VBE(on) @ VCE = –5.0 V
相關PDF資料
PDF描述
MPSW63RLRE 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RLRA 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RLRE 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64RL 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64ZL1 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關代理商/技術參數
參數描述
MPSW64 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Darlington Transistors PNP Silicon
MPSW92 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW92_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Voltage Transistor
MPSW92G 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSW92RLRA 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 富阳市| 花垣县| 康平县| 宜丰县| 广平县| 安仁县| 天门市| 盘锦市| 望城县| 芜湖县| 宁安市| 高雄市| 灌阳县| 阳原县| 沅江市| 汾西县| 竹山县| 广灵县| 夏邑县| 彰化市| 黎川县| 永昌县| 阳泉市| 忻州市| 诸暨市| 化州市| 丹东市| 博野县| 永济市| 东乌珠穆沁旗| 南投市| 玛多县| 琼结县| 施秉县| 建水县| 长垣县| 上虞市| 陕西省| 洪湖市| 山阳县| 当阳市|