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參數資料
| 型號： | RF2119 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | HIGH EFFICIENCY 2V POWER AMPLIFIER |
| 中文描述： | 800 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SSOP-16 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 82K |
| 代理商： | RF2119 |
2-55
2
P
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
LMATCH
GND
VCC
GND1
RF IN
GND
BIAS1
BIAS2
NC
RF OUT
RF OUT
RF OUT
NC
NC
VPC
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2119
HIGH E F FICIE NCY 2V POWER AMPLIFIER
Two-Way Pagers
915MHz ISM Band Equipment
Spread-Spectrum Systems
3V AMPS/ETACS Cellular Handsets
CDPD Portable Data Cards
Personal Digital Cellular
The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4V handheld systems. The device is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50
input and
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack-
age is a PSSOP-16 with backside ground.
Single 2V to 5V Supply
30dBm Output Power at 2.5V
30dB Small Signal Gain
53% Efficiency
On-board Power Down Mode
800MHz to 960MHz Operation
RF2119
RF2119 PCBA
High Efficiency 2V Power Amplifier
Fully Assembled Evaluation Board
2
Rev A8 010720
0.05 ± 0.05 3
-A-
0.25 ± 0.05
0.635
1.40 ± 0.10
Exposed
2.70 ± 0.10
1.70 ± 0.10
3.90
± 0.10
4.90 ± 0.10
6.00 ± 0.20
0.60 ± 0.15
8° MAX
0° MIN
0.24
0.20
Package S tyle: PS SOP-16
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| RF2125PPCBA | HIGH POWER LINEAR AMPLIFIER |
| RF2125 | HIGH POWER LINEAR AMPLIFIER |
| RF2125PCBA | HIGH POWER LINEAR AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF2119-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2119PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH EFFICIENCY 2V POWER AMPLIFIER |
| RF212 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Image-Reject Front End for Dual or Tri-Band GSM Applications |
| RF2120-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2121-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
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