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參數(shù)資料
| 型號(hào)： | S25FL004D0LMFI013 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| 中文描述： | 4M X 1 FLASH 3V PROM, PDSO8 |
| 封裝： | 0.208 INCH, LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 10/36頁(yè) |
| 文件大小： | 724K |
| 代理商： | S25FL004D0LMFI013 |
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18
S25FL Family (Serial Peripheral Interface) S25FL004D
S25FL004D_00A0 June 28, 2004
Ad va n c e
In f o rm a t i o n
or by driving Write Protect (W#) Low after setting the Status Register Write
Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull
Write Protect (W#) High.
If Write Protect (W#) is permanently tied High, the Hardware Protected Mode
(HPM) can never be activated, and only the Software Protected Mode (SPM),
using the Block Protect (BP2, BP1, BP0) bits of the Status Register, can be used.
Read Data Bytes (READ)
The READ instruction reads the memory at the specified SCK frequency (fSCK)
with a maximum speed of 33 MHz.
The device is first selected by driving Chip Select (CS#) Low. The instruction code
for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-
A0), each bit being latched-in during the rising edge of Serial Clock (SCK). Then
the memory contents, at that address, are shifted out on Serial Data Output
(SO), each bit being shifted out, at a frequency fSCK, during the falling edge of
Serial Clock (SCK).
The instruction sequence is shown in Figure 9. The first byte addressed can be at
any location. The address is automatically incremented to the next higher ad-
dress after each byte of data is shifted out. The whole memory can, therefore, be
read with a single Read Data Bytes (READ) instruction. When the highest address
is reached, the address counter rolls over to 00000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output.
Any Read Data Bytes (READ) instruction, while a Program, Erase, or Write cycle
is in progress, is rejected without having any effect on the cycle that is in
progress.
Figure 9. Read Data Bytes (READ) Instruction Sequence
Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction reads the memory at the specified SCK frequency
(fSCK) with a maximum speed of 50 MHz. The device is first selected by driving
Chip Select (CS#) Low. The instruction code for (FAST_READ) instruction is fol-
lowed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-
in during the rising edge of Serial Clock (SCK). Then the memory contents, at that
Instruction
24-Bit Address
High Impedance
MSB
Data Out 1
Data Out 2
0
31 32 33 34 35 36 37 38 39
30
23
28
10
9
8
7
6
5
4
3
2
1
7 6 5
23 22 21
4
3 2
1 0
3
2
1 0 7
SO
SI
SCK
CS#
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| S25FL004D0LNFI013 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S25FL004D0LNAI011 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNAI013 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNFI011 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNFI013 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004K0XMFI010 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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