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參數(shù)資料
| 型號(hào)： | S25FL004D0LNFI011 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| 中文描述： | 4M X 1 FLASH 3V PROM, DSO8 |
| 封裝： | 6 X 5 MM, LEAD FREE, MO-229, WSON-8 |
| 文件頁數(shù)： | 16/36頁 |
| 文件大?。?/td> | 724K |
| 代理商： | S25FL004D0LNFI011 |
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June 28, 2004 S25FL004D_00A0
S25FL Family (Serial Peripheral Interface) S25FL004D
23
Ad va nc e
In forma t i o n
Figure 14. Deep Power Down (DP) Instruction Sequence
Release from Deep Power Down (RES)
The Release from Deep Power Down (RES) instruction provides the only way to
exit the Deep Power Down mode. Once the device has entered the Deep Power
Down mode, all instructions are ignored except the Release from Deep Power
Down (RES) instruction. Executing this instruction takes the device out of Deep
Power Down mode.
The Release from Deep Power Down (RES) instruction is entered by driving Chip
Select (CS#) Low, followed by the instruction code on Serial Data Input (SI). Chip
Select (CS#) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 15.
Driving Chip Select (CS#) High after the 8-bit instruction byte has been received
by the device, but before the whole of the 8-bit Electronic Signature has been
transmitted for the first time, still insures that the device is put into Standby
mode. If the device was previously in the Deep Power Down mode, though, the
transition to the Stand-by Power mode is delayed by tRES, and Chip Select (CS#)
by Power mode, the device waits to be selected, so that it can receive, decode
and execute instructions.
CS#
SCK
SI
Standby Mode
Deep Power Down Mode
Instruction
0
1
23
4
5
6
7
tDP
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| S25FL004D0LNFI013 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNAI011 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNAI013 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S25FL004D0LNFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004K0XMFI010 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL004K0XMFI011 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL004K0XMFI013 | 制造商:Spansion 功能描述:FLASH SERL-SPI 3V/3.3V 4MBIT - Bulk |
| S25FL004K0XMFI040 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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