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參數(shù)資料
型號(hào): S25FL004D0LNFI013
廠(chǎng)商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
中文描述: 4M X 1 FLASH 3V PROM, DSO8
封裝: 6 X 5 MM, LEAD FREE, MO-229, WSON-8
文件頁(yè)數(shù): 13/36頁(yè)
文件大小: 724K
代理商: S25FL004D0LNFI013
20
S25FL Family (Serial Peripheral Interface) S25FL004D
S25FL004D_00A0 June 28, 2004
Ad va n c e
In f o rm a t i o n
the Status Register may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle,
and is 0 when it is completed. At some unspecified time before the cycle is com-
pleted, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page that is protected by the Block
Protect (BP2, BP1, BP0) bits (see Table 1) is not executed.
Figure 11. Page Program (PP) Instruction Sequence
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector.
Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been de-
coded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code, and three address bytes on Serial Data Input
(SI). Any address inside the Sector (see Table 1) is a valid address for the Sector
Erase (SE) instruction. Chip Select (CS#) must be driven Low for the entire du-
ration of the sequence.
The instruction sequence is shown in Figure 12.
Chip Select (CS#) must be driven High after the eighth bit of the last address byte
has been latched in, otherwise the Sector Erase (SE) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle
(whose duration is tSE) is initiated. While the Sector Erase cycle is in progress,
the Status Register may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle,
0
34
33
32
31
30
29
28
10
9
8
7
6
5
4
3
2
1
35 36 37 38 39
46
45
44
43
42
41
40
47 48 49 50 51 52 53 54 55
2073
2072
2076
2075
2074
2079
2078
2077
23 22 21
3
21
07
6
5
43
2
1
0
Data Byte 1
24-Bit Address
Instruction
Data Byte 2
Data Byte 3
Data Byte 256
MSB
SCK
SI
SCK
SI
7
65
4
3
2
1
0
76
54
32
1
0
7
6
5
432
10
CS#
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參數(shù)描述
S25FL004K0XMFI010 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S25FL004K0XMFI011 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S25FL004K0XMFI013 制造商:Spansion 功能描述:FLASH SERL-SPI 3V/3.3V 4MBIT - Bulk
S25FL004K0XMFI040 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S25FL004K0XMFI041 制造商:Spansion 功能描述:IC 4-MBIT CMOS 3.0 VOLT FLASH MEMORY 104MHZ SPI - Bulk
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