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參數資料
| 型號： | S25FL004D0LNFI013 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| 中文描述： | 4M X 1 FLASH 3V PROM, DSO8 |
| 封裝： | 6 X 5 MM, LEAD FREE, MO-229, WSON-8 |
| 文件頁數： | 15/36頁 |
| 文件大?。?/td> | 724K |
| 代理商： | S25FL004D0LNFI013 |
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S25FL Family (Serial Peripheral Interface) S25FL004D
S25FL004D_00A0 June 28, 2004
Ad va n c e
In f o rm a t i o n
Figure 13. Bulk Erase (BE) Instruction Sequence
Deep Power Down (DP)
The Deep Power Down (DP) instruction puts the device in the lowest current
mode of 1 A typical.
It is recommended that the standard Standby mode be used for the lowest power
current draw, as well as the Deep Power Down (DP) as an extra software protec-
tion mechanism when this device is not in active use. In this mode, the device
ignores all Write, Program and Erase instructions. Chip Select (CS#) must be
driven Low for the entire duration of the sequence.
The Deep Power Down (DP) instruction is entered by driving Chip Select (CS#)
Low, followed by the instruction code on Serial Data Input (SI). Chip Select (CS#)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 14.
Driving Chip Select (CS#) High after the eighth bit of the instruction code has
been latched puts the device in Deep Power Down mode. The Deep Power Down
mode can only be entered by executing the Deep Power Down (DP) instruction to
Chip Select (CS#) is driven high, it requires a delay of tDP currently in progress
before Deep Power Down mode is entered.
Once the device has entered the Deep Power Down mode, all instructions are ig-
nored except the Release from Deep Power Down (RES) and Read Electronic
Signature. This releases the device from the Deep Power Down mode. The Re-
lease from Deep Power Down and Read Electronic Signature (RES) instruction
also allows the Electronic Signature of the device to be output on Serial Data Out-
put (SO).
The Deep Power Down mode automatically stops at Power-down, and the device
always powers up in the Standby mode.
Any Deep Power Down (DP) instruction, while an Erase, Program or WRSR cycle
is in progress, is rejected without having any effect on the cycle in progress.
01
2
4
5
6
7
Instruction
CS#
SCK
SI
3
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| S25FL004D0LNAI013 | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL064A0LNAI00 | 64M X 1 FLASH 3V PROM, PDSO16 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| S25FL004K0XMFI010 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL004K0XMFI011 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL004K0XMFI013 | 制造商:Spansion 功能描述:FLASH SERL-SPI 3V/3.3V 4MBIT - Bulk |
| S25FL004K0XMFI040 | 功能描述:閃存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL004K0XMFI041 | 制造商:Spansion 功能描述:IC 4-MBIT CMOS 3.0 VOLT FLASH MEMORY 104MHZ SPI - Bulk |
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