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參數資料
| 型號： | S25FL064A0LNAI00 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 64M X 1 FLASH 3V PROM, PDSO16 |
| 封裝： | 0.300 INCH, PLASTIC, MS-013AA, SOP-16 |
| 文件頁數： | 7/36頁 |
| 文件大小： | 1495K |
| 代理商： | S25FL064A0LNAI00 |
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16
S25FL064A
S25FL064A_00_C3 June 29, 2007
Da ta
Sh e e t
9.
Command Definitions
The host system must shift all commands, addresses, and data in and out of the device, beginning with the
most significant bit. On the first rising edge of SCK after CS# is driven low, the device accepts the one-byte
command on SI (all commands are one byte long), most significant bit first. Each successive bit is latched on
the rising edge of SCK. Table 9.4 on page 28 lists the complete set of commands.
Every command sequence begins with a one-byte command code. The command may be followed by
address, data, both, or nothing, depending on the command. CS# must be driven high after the last bit of the
command sequence has been written.
The Read Data Bytes (READ), Read Status Register (RDSR), Read Data Bytes at Higher Speed
(FAST_READ) and Read Identification (RDID) command sequences are followed by a data output sequence
on SO. CS# can be driven high after any bit of the sequence is output to terminate the operation.
The Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status Register (WRSR), Write Enable
(WREN), or Write Disable (WRDI) commands require that CS# be driven high at a byte boundary, otherwise
the command is not executed. Since a byte is composed of eight bits, CS# must therefore be driven high
when the number of clock pulses after CS# is driven low is an exact multiple of eight.
The device ignores any attempt to access the memory array during a Write Status Register, program, or
erase operation, and continues the operation uninterrupted.
9.1
Read Data Bytes (READ)
The Read Data Bytes (READ) command reads data from the memory array at the frequency (fSCK) presented
at the SCK input, with a maximum speed of 33 MHz. The host system must first select the device by driving
CS# low. The READ command is then written to SI, followed by a 3-byte address (A23-A0). Each bit is
latched on the rising edge of SCK. The memory array data, at that address, are output serially on SO at a
frequency fSCK, on the falling edge of SCK.
Figure 9.1 and Table 9.4 on page 28 detail the READ command sequence. The first byte specified can be at
any location. The device automatically increments to the next higher address after each byte of data is output.
The entire memory array can therefore be read with a single READ command. When the highest address is
reached, the address counter reverts to 00000h, allowing the read sequence to continue indefinitely.
The READ command is terminated by driving CS# high at any time during data output. The device rejects any
READ command issued while it is executing a program, erase, or Write Status Register operation, and
continues the operation uninterrupted.
Figure 9.1 Read Data Bytes (READ) Command Sequence
Command
24-Bit Address
Hi-Z
MSB
Data Out 1
Data Out 2
0
31 32 33 34 35 36 37 38 39
30
29
28
10
9
8
7
6
5
4
3
2
1
7 6
5
23 22 21
4
3 2
1 0
3
2
10 7
SO
SI
SCK
CS#
Mode 3
Mode 0
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相關代理商/技術參數 |
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| S25FL064K | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64-Mbit CMOS 3.0 Volt Flash Memory with 80-MHz SPI (Serial Peripheral Interface) Multi I/O Bus |
| S25FL064K0SMFI010 | 功能描述:閃存 IC 64MBIT CMOS 3V FL MEMORY 80-MHZ SPI RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL064K0SMFI011 | 功能描述:閃存 IC 64MBIT CMOS 3V FL MEMORY 80-MHZ SPI RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S25FL064K0SMFI013 | 制造商:Spansion 功能描述:FLASH SERL-SPI 3V/3.3V 64MBIT - Bulk |
| S25FL064LABBHI020 | 功能描述:IC FLASH NOR 24FBGA 制造商:cypress semiconductor corp 系列:FL-L 包裝:托盤 零件狀態:在售 存儲器類型:非易失 存儲器格式:閃存 技術:FLASH - NOR 存儲容量:64Mb （8M x 8） 時鐘頻率:108MHz 寫周期時間 - 字，頁:- 存儲器接口:SPI - 四 I/O， QPI 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:24-TBGA 供應商器件封裝:24-BGA（6x8） 標準包裝:338 |
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