- 您現在的位置：買賣IC網 > PDF目錄192295 > S29AL032D90TFI043 (SPANSION LLC) 32 Megabit CMOS 3.0 Volt-only Flash Memory PDF資料下載
參數資料
| 型號： | S29AL032D90TFI043 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數： | 28/67頁 |
| 文件大小： | 1708K |
| 代理商： | S29AL032D90TFI043 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當前第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁
32
S29AL032D
S29AL032D_00_A8 November 2, 2006
Da ta
Sh e e t
11. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 11.2 on page 38 defines the valid register command sequences. Writing incorrect address
and data values or writing them in the improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams under AC
11.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data. After completing a programming operation in the Erase
Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/
Erase Resume Commands on page 35 for more information on this mode.
The system must issue the reset command in order to re-enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See Reset Command on page 32.
See also Requirements for Reading Array Data on page 13 for more information. The Read Operations on
page 49 provides the read parameters, and Figure 17.1 on page 49 shows the timing diagram.
11.2
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data. Once erasure begins, however, the device
ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to reading array data (also applies to programming in Erase
Suspend mode). Once programming begins, however, the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
reading array data (also applies during Erase Suspend).
11.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes,
and determine whether a sector is protected. Table 11.2 on page 38 shows the address and data
requirements. This method is an alternative to that shown in Table on page 21, which is intended for PROM
programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect mode, and the system may read at any address any
number of times, without initiating another command sequence.
A read cycle at address 0XXX00h retrieves the manufacturer code. A read cycle at address 0XXX01h returns
the device code. A read cycle containing a sector address (SA) and the address 02h in word mode (or 04h in
byte mode) returns 01h if that sector is protected, or 00h if it is unprotected. Refer to Table 7.3 on page 15
and Table 7.5 on page 17 for valid sector addresses.
The system must write the reset command to exit the autoselect mode and return to reading array data.
相關PDF資料 |
PDF描述 |
|---|---|
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD032J1JFAI122 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
| S29CD032J1MFAN120 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
| S29CD032J1MQFN133 | 1M X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29AS008J70BFI030 | 功能描述:閃存 8Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AS008J70BFI032 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70BFI042 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70TFI030 | 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AS008J70TFI040 | 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。