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參數資料
| 型號： | S29AL032D90TFI043 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數： | 29/67頁 |
| 文件大?。?/td> | 1708K |
| 代理商： | S29AL032D90TFI043 |
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November 2, 2006 S29AL032D_00_A8
S29AL032D
33
Data
She e t
11.4
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, sixteen-byte electronic
serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle
Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon
Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit
Secured Silicon Sector command sequence returns the device to normal operation. Table 11.1 on page 37
and Table 11.2 on page 38 show the addresses and data requirements for both command sequences. Note
that the ACC function and unlock bypass modes are not available when the device enters the Secured Silicon
Sector. See also Secured Silicon Sector Flash Memory Region on page 26 for further information.
11.5
Word/Byte Program Command Sequence
Models 03, 04 may program the device by word or byte, depending on the state of the BYTE# pin. Model 00
may program the device by byte only. Programming is a four-bus-cycle operation. The program command
sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The
program address and data are written next, which in turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or timings. The device automatically generates the program
pulses and verifies the programmed cell margin. Table 11.2 on page 38 shows the address and data
requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See Write Operation Status on page 40 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation. The Byte Program command sequence
should be reinitiated once the device has reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from
a 0 back to a 1. Attempting to do so may halt the operation and set DQ5 to 1, or cause the Data# Polling
algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still
0. Only erase operations can convert a 0 to a 1.
11.6
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than using the
standard program command sequence. The unlock bypass command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 11.2 on page 38 shows the
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are
valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command
sequence. The first cycle must contain the data 90h; the second cycle the data 00h. Addresses are don’t care
for both cycles. The device then returns to reading array data.
Figure 11.1 on page 34 illustrates the algorithm for the program operation. See the Erase/Program
Operations on page 52 for parameters, and to Figure 17.5 on page 53 for timing diagrams.
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| S29AS008J70BFI042 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70TFI030 | 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AS008J70TFI040 | 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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