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參數(shù)資料
型號(hào): S29AL032D90TFI043
廠商: SPANSION LLC
元件分類: PROM
英文描述: 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: LEAD FREE, MO-142DD, TSOP-48
文件頁數(shù): 38/67頁
文件大小: 1708K
代理商: S29AL032D90TFI043
November 2, 2006 S29AL032D_00_A8
S29AL032D
41
Data
She e t
Figure 12.1 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for
erasure. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
12.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
50, Figure 17.5 on page 53 and Figure 17.6 on page 53 shows RY/BY# for read, reset, program, and erase
operations, respectively.
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
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