- 您現在的位置：買賣IC網 > PDF目錄192295 > S29AL032D90TFI043 (SPANSION LLC) 32 Megabit CMOS 3.0 Volt-only Flash Memory PDF資料下載
參數資料
| 型號： | S29AL032D90TFI043 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數： | 41/67頁 |
| 文件大?。?/td> | 1708K |
| 代理商： | S29AL032D90TFI043 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁當前第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁
44
S29AL032D
S29AL032D_00_A8 November 2, 2006
Da ta
Sh e e t
12.6
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a 1. This is a failure condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system tries to program a 1 to a location that is previously
programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device
halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a 1.
Under both these conditions, the system must issue the reset command to return the device to reading array
data.
12.7
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out also applies after each additional sector erase command.
When the time-out is complete, DQ3 switches from 0 to 1. The system may ignore DQ3 if the system can
guarantee that the time between additional sector erase commands will always be less than 50
μs. See
After the sector erase command sequence is written, the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure that the device accepts the command sequence, and then read DQ3.
If DQ3 is 1, the internally controlled erase cycle has begun; all further commands (other than Erase Suspend)
are ignored until the erase operation is complete. If DQ3 is 0, the device accepts additional sector erase
commands. To ensure that the command has been accepted, the system software should check the status of
DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status
check, the last command might not have been accepted. Table 12.1 shows the outputs for DQ3.
Notes
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. See DQ5: Exceeded Timing Limits on
page 44 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
13. Absolute Maximum Ratings
Table 12.1 Write Operation Status
Operation
DQ7
DQ6
DQ5
DQ3
DQ2
RY/BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
0
Table 13.1 Absolute Maximum Ratings
Parameter
Rating
Storage Temperature, Plastic Packages
–65
°C to +150°C
Ambient Temperature with Power Applied
–65
°C to +125°C
Voltage with Respect to Ground
VCC (Note 1)
–0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2)
–0.5 V to +12.5 V
All other pins (Note 1)
–0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3)
200 mA
相關PDF資料 |
PDF描述 |
|---|---|
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD032J1JFAI122 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
| S29CD032J1MFAN120 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
| S29CD032J1MQFN133 | 1M X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29AS008J70BFI030 | 功能描述:閃存 8Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AS008J70BFI032 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70BFI042 | 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays |
| S29AS008J70TFI030 | 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AS008J70TFI040 | 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。