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參數資料
型號: S29CD016G0JDEI007
廠商: SPANSION LLC
元件分類: PROM
英文描述: 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
封裝: 7.44 X 4.46 MM, DIE-76
文件頁數: 1/15頁
文件大小: 437K
代理商: S29CD016G0JDEI007
Publication Number S29CD016G_KGD
Revision A Amendment 1 Issue Date October 21, 2005
S29CD016G Known Good Die
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only
Burst Mode, Dual Boot, Simultaneous Read/Write
Flash Memory
Data Sheet Supplement
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/Write operations
— Data can be continuously read from the 75% bank
while executing erase/program functions in the 25%
bank
— Zero latency between read and write operations
— Two bank architecture: 75%/25%
User-Defined x32 Data Bus
Dual Boot Block
— Top and bottom boot in the same device
Flexible sector architecture
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
Manufactured on 0.17 m process technology
SecSi (Secured Silicon) Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by Spansion
— Customer lockable: Can be read, programmed or
erased just like other sectors. Once locked, data
cannot be changed
Programmable Burst interface
— Interface to any high performance processor
— Modes of Burst Read Operation:
— Linear Burst: 4 double words and 8 double words
with wrap around
Single power supply operation
— Optimized for 2.5 to 2.75 Volt read, erase, and
program operations
Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with Spansion Am29LV and
Am29F, and Fujitsu MBM29LV and MBM29F flash
memories
Performance Characteristics
High performance read access
— Initial/random access times as fast as 64 ns
— Burst access time as fast as 10 ns
Ultra low power consumption
— Burst Mode Read: 90 mA @ 56 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 150 A max
1 million write cycles per sector typical
20 year data retention typical
Versatile I/O control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the VIO pin
— 1.65 V to 2.75 V compatible I/O signals
—3.6 V tolerant I/O signals
Software Features
Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only VCC levels)
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy#
(RY/BY#), and Write Protect (WP#) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Quality and reliability levels equivalent to
standard packaged components
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