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參數資料
型號: S29CL016J0MFAM100
廠商: SPANSION LLC
元件分類: PROM
英文描述: 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
封裝: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁數: 28/78頁
文件大小: 1825K
代理商: S29CL016J0MFAM100
32
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
Prel imi n ary
After an erase-suspended program operation is complete, the bank returns to the erase-suspend
read mode. The system can determine the status of the program operation using the DQ7, DQ6,
and/or RY/BY# status bits, just as in the standard program operation.
To resume the sector erase operation, the system must write the Erase Resume command. The
bank address of the erase-suspended bank is required when writing this command. Further
writes of the Resume command are ignored. Another Erase Suspend command can be written
after the chip has resumed erasing.
The following are the allowable operations when Erase Suspend is issued under certain
conditions:
For the Busy Sectors, the host system may
Read status
Write the Erase Resume command
For the Non Busy Sectors, the system may
Read data
Program data or write the Suspend/Resume Erase command
8.7.5
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming op-
eration so that data can read from any non-suspended sector. When the Program Suspend
command is written during a programming process, the device halts the programming operation
and updates the status bits.
After the programming operation has been suspended, the system can read array data from any
non-suspended sector. If a read is needed from the Secured Silicon Sector area, then user must
use the proper command sequences to enter and exit this region. The Sector Erase and Program
Resume Command is ignored if the Secured Silicon sector is enabled.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7, DQ6, and/or RY/BY# status
bits, just as in the standard program operation. See Write Operation Status on page 33 for more
information.
The system must write the Program Resume command in order to exit the Program Suspend
mode, and continue the programming operation. Further writes of the Program Resume com-
mand are ignored. Another Program Suspend command can be written after the device has
resumed programming.
The following are the allowable operations when Program Suspend is issued under certain
conditions:
For the Busy Sectors, the host system may write the Program Resume command
For the Non Busy Sectors, the system may read data
8.7.6
Accelerated Program and Erase Operations
Accelerated programming and erasing is enabled through the ACC function. This method is faster
than the standard program command sequences.
The device offers accelerated program/erase operations through the ACC pin. When the system
asserts VHH (12V) on the ACC pin, the device automatically enters the Unlock Bypass mode. The
system may then write the two-cycle Unlock Bypass program command sequence to do acceler-
ated programming. The device uses the higher voltage on the ACC pin to accelerate the
operation. Any sector that is being protected with the WP# pin is still protected during acceler-
ated program or Erase. Removing VHH from the ACC input, upon completion of the embedded
program or erase operation, returns the device to normal operation.
相關PDF資料
PDF描述
S29CL016J0PFFM102 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL016J1JFFM112 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CD032J1JFAN110 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CD032J1JFFN020 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CL032J0RFAI113 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
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