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參數資料
| 型號： | SM6T68A/5B |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMBJ, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | SM6T68A/5B |
SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88385
www.vishay.com
09-Oct-02
1
Surface Mount TRANSZORB
Transient Voltage Suppressors
Breakdown Voltage 6.8 to 220V
Peak Pulse Power 600W
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation on
PPPM
Minimum 600
W
10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Next Table
A
Power dissipation on infinite heatsink, TA = 50°C
PM(AV)
5.0
W
Peak forward surge current 10ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Thermal resistance junction to ambient air(3)
R
θJA
100
°C/W
Thermal resistance junction to leads
R
θJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA (SMBJ)
Features
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition rate (duty cycle): 0.01%
Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V(BR) for
unidirectional and 5ns for bidirectional types
High temperature soldering: 250°C/10 seconds at
terminals
Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7” plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
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| SM6T30CA/51-E3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SM6T12A/51 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SM6T10A/52 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SM6T10A/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SM6T18A/52 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SM6T68A-E3/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 68V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T68A-E3/2C | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 68V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T68A-E3/51 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 68V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T68A-E3/52 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 68V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T68A-E3/55 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 68V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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