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參數(shù)資料
| 型號： | TP2435 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-350V，低門限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管（擊穿電壓- 350V，低門限為2.4V，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | TP2435 |
1
TP2435
08/17/99
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
TP2435
Ordering Information
Features
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces
Solid state relays
Linear Amplifiers
Power Management
Analog switches
Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
Order Number / Package
BV
DSS
/
BV
DGS
-350V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-243AA*
Die**
15
-2.4V
-800mA
TP2435N8
TP2435NW
*
** Die in wafer form.
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
TO-243AA
(SOT-89)
G
D
S
D
Low Threshold
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP2435 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2435N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2435NW | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2502 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-20V，低門限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| TP2502 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2435N8 | 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2435N8-G | 功能描述:MOSFET 350V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2435NW | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP244 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS |
| TP2440-W1 | 制造商:Black Box Corporation 功能描述:1 YEAR WARRANTY FOR TP2440 |
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