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參數(shù)資料
| 型號： | TPC8402 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII) |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 719K |
| 代理商： | TPC8402 |
TPC8402
2002-05-07
1
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (
π
MOS
VI
/U
MOSII)
TPC8402
Lithium Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
z
Low drain
source ON resistance
: P Channel R
DS
(ON)
= 27 m
(typ.)
N Channel R
DS
(ON)
= 37 m
(typ.)
z
High forward transfer admittance
: P Channel |Y
fs
| = 7 S (typ.)
N Channel |Y
fs
| = 6 S (typ.)
z
Low leakage current
: P Channel I
DSS
=
1
0 μA (V
DS
=
30 V)
N Channel I
DSS
=
1
0 μA (V
DS
= 30 V)
z
Enhancement
mode
: P Channel V
th
=
0.8~
2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
N Channel V
th
= 0.8~2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
Rating
Characteristics
Symbol P Channel N Channel
Unit
Drain-source voltage
V
DSS
30
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
30
V
Gate-source voltage
V
GSS
±20
±20
V
DC
(Note 1)
I
D
4.5
5
Drain current
Pulse
(Note 1)
I
DP
18
20
A
Single-device operation
(Note 3a)
P
D (1)
1.5
1.5
Drain power
dissipation
(t = (Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
dissipation
(t = 10s)
(Note 2b)
dual operation
(Note 3b)
P
D (2)
1.0
1.0
(Note 3a)
P
D (1)
0.75
0.75
Drain power
Single-device value at
P
D (2)
0.45
0.45
W
Single pulse avalanche energy
E
AS
26.3
(Note 4a)
32.5
(Note 4b)
mJ
Avalanche current
I
AR
4.5
5
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.10
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
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