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參數資料
| 型號： | XP1001 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 26.0-40.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 26.0-40.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 220K |
| 代理商： | XP1001 |
Chip Device Layout
High Linearity Wideband Amplifier
On-Chip Temperature Compensated
Output Power Detector
Balanced Design Provides Good Input/Output Match
11.0 dB Small Signal Gain
+31.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband
s two stage 26.0-40.0 GHz GaAs MMIC
power amplifier is optimized for linear operation with a third
order intercept point of +31.0 dBm. The device also includes
Lange couplers to achieve good input/output return loss
and an on-chip temperature compensated output power
detector. This MMIC uses Mimix Broadband
s 0.15
m GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
26.0-40.0 GHz GaAs MMIC
Power Amplifier
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
Vdc
Vdc
mA
Vdc
Min.
26.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
18.0
18.0
11.0
+/-1.0
40.0
+21.0
+31.0
5.5
-0.5
430
0.28
Max.
40.0
-
-
-
-
-
-
-
5.6
0.0
650
-
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K )
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=5.5V, Vg=-0.5V Typical)
Detector (diff) Output at 20dBm
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vd5=I.0V, or Vd5=5.5V and Rd=5.6K
.
Electrical Characteristics (Ambient Temperature T=25
o
C)
Page 1 of 6
Features
+6.0 Vdc
700 mA
+0.3 Vdc
+14.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Absolute Maximum Ratings
4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
2
1,2
3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2004 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4
May 2005 - Rev 05-May-05
P1001
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相關代理商/技術參數 |
參數描述 |
|---|---|
| XP1001000-01 | 功能描述:以太網模塊 XPORT XE WITHO RoHS:否 制造商:Lantronix 產品:Device Servers 數據速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
| XP100-1000-03 | 制造商:Lantronix Inc 功能描述:Serial to Ethernet Server CMOS Technology 10Mbps/100Mbps |
| XP1001000-03 | 功能描述:以太網模塊 XPORT XE - STANDARD NO ENCRYPTION RoHS:否 制造商:Lantronix 產品:Device Servers 數據速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
| XP1001000-03R | 功能描述:以太網模塊 XPort XE Ext. Temp without Encryption RoHS:否 制造商:Lantronix 產品:Device Servers 數據速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
| XP1001000-04R | 功能描述:以太網模塊 XPort XE Ext. Temp. without Encryption RoHS:否 制造商:Lantronix 產品:Device Servers 數據速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
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