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參數(shù)資料
| 型號(hào)： | XP1005 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 35.0-43.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 35.0-43.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 397K |
| 代理商： | XP1005 |
Mimix Broadband
’
s four stage 35.0-43.0 GHz GaAs
MMIC power amplifier has a small signal gain of 26.0
dB with a +24.0 dBm saturated output power. The
device also includes Lange couplers to achieve good
output return loss. This MMIC uses Mimix Broadband
’
s
0.15
μ
m GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
35.0-43.0 GHz GaAs MMIC
Power Amplifier
Excellent Saturated Output Stage
Balanced Design Provides Good Output Match
26.0 dB Small Signal Gain
+24.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11) @ 37.0-40.0
Output Return Loss (S22) @ 37.0-40.0
Small Signal Gain (S21) @ 37.0-40.0
Gain Flatness (
S21)
Reverse Isolation (S12) @ 37.0-40.0
Saturated Output Power (P
SAT
) @ 37.0-40.0
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
35.0
6.0
12.0
23.0
-
35.0
+23.0
-
-1.0
-
Typ.
-
10.0
15.0
26.0
+/-2.0
40.0
+24.0
+4.5
-0.7
500
Max.
43.0
-
-
-
-
-
-
+5.5
0.0
1000
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
1050 mA
+0.3 VDC
+8.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 7
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 05-May-05
P1005
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1006-FA | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006-FA-0N00 | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006-FA-EV1 | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006 | 8.5-11.0 GHz GaAs MMIC Power Amplifier |
| XP1008 | 11.0-16.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1005-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-43.0 GHz GaAs MMIC Power Amplifier |
| XP1005-BD_11 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-43.0 GHz GaAs MMIC |
| XP1005-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-43.0 GHz GaAs MMIC Power Amplifier |
| XP1005-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-43.0 GHz GaAs MMIC Power Amplifier |
| XP1006 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs MMIC Power Amplifier |
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