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參數資料
| 型號： | XP1006-FA-0N00 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| 中文描述： | 8500 MHz - 11000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, LCC-10 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 237K |
| 代理商： | XP1006-FA-0N00 |
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
Page 1 of 6
P1006-FA
August 2006 - Rev 16-Aug-06
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband
’
s three stage 8.5-11.0 GHz GaAs
packaged power amplifier has a large signal gain of
21.5 dB with a +40.5 dBm saturated output power.
This device uses Mimix Broadband
’
s 0.5 m GaAs
PHEMT device model technology, and is based upon
optical gate lithography to ensure high repeatability
and uniformity. The device comes in a 10 pin, high
frequency, LCC flange package. The package has a
copper composite base material and a laminated
ceramic substrate. This device is well suited for radar
applications.
X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing
Features
General Description
Electrical Characteristics
(Pulsed Mode F=10kHz, Duty Cycle=5%, T
A
=25oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
1
Output Return Loss (S22)
1
Large Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
1
Saturated Output Power (P
SAT
)
Power Added Efficiency (PAE)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical)
(1) Measured on-wafer pre-packaging.
Units
GHz
dB
dB
dB
dB
dB
dBm
%
VDC
VDC
A
Min.
8.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
15.0
12.0
21.5
+/-0.5
60.0
+40.5
37
+8.0
-0.6
4.0
Max.
11.0
-
-
-
-
-
-
-
+9.0
-
4.5
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
4.5 A
+0.0 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
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|---|---|
| XP1006-FA-EV1 | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006 | 8.5-11.0 GHz GaAs MMIC Power Amplifier |
| XP1008 | 11.0-16.0 GHz GaAs MMIC Power Amplifier |
| XP1009 | 17.0-21.0 GHz GaAs MMIC Power Amplifier |
| XP1010 | 21.0-24.0 GHz GaAs MMIC Power Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XP1006-FA-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1008 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-16.0 GHz GaAs MMIC Power Amplifier |
| XP1009 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-21.0 GHz GaAs MMIC Power Amplifier |
| XP1010 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:21.0-24.0 GHz GaAs MMIC Power Amplifier |
| XP1010-RDB | 制造商:Freescale Semiconductor 功能描述: |
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