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參數資料
| 型號： | XP134A02A1SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | P-Channel Power MOS FET |
| 中文描述： | P溝道功率MOS場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 154K |
| 代理商： | XP134A02A1SR |
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The XP134A02A1SR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance
: Rds(on)=0.11
(Vgs=-4.5V)
: Rds(on)=0.2
(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOP-8
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
N
P-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance: 0.11
(max)
N
Ultra High-Speed Switching
N
SOP-8 Package
N
Two FET Devices Built-in
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
S1
S2
G1
Source
Source
Gate
4
7~8
5~6
G2
D1
D2
Gate
Drain
Drain
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
When implemented on a glass epoxy PCB
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-20
±
12
-4
-12
-4
2
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
Ta=25
:
Note:
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