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參數資料
| 型號： | XR1008-QB-0L0T |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 通信及網絡 |
| 英文描述： | 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PQCC28 |
| 封裝： | 7 X 7 MM, ROHS COMPLIANT, PLASTIC, QFN-28 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 254K |
| 代理商： | XR1008-QB-0L0T |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 21-Mar-07
35.0-45.0 GHz GaAs Receiver
QFN, 7x7 mm
Page 1 of 7
R1008-QB
Mimix Broadband’s 35.0-45.0 GHz packaged receiver has a
noise figure of 4.0 dB and 5.0 dBm Input Third Order
Intercept across the band. This device integrates a three
stage LNA followed by an image reject resistive pHEMT
mixer and includes an integrated LO doubler and buffer
amplifier. The use of integrated LO doubler and LO buffer
amplifier makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q mixer
outputs are provided and an external 90 degree hybrid is
required to select the desired sideband. The device comes
in a 7x7mm QFN package that is RoHS compliant. This
device is well suited for Millimeter-wave Point-to-Point
Radio, LMDS, SATCOM and VSAT applications.
Sub-harmonic Receiver
Integrated LNA, Image Reject Mixer, LO Doubler/Buffer
+2.0 dBm LO Drive Level
8.0 dB Conversion Gain
4.0 dB NF
+5.0 dBm Input Third Order Intercept (IP3)
7x7mm QFN package
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF)
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)
Input 1 dB Compression (IP1dB)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=4.0, Vg=-0.5V Typical)
Units
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
35.0
16.0
DC
-
-
-
-
-
-
-
-
-
-1.2
-
Typ.
-
-
-
10.0
8.0
+2.0
20.0
4.0
40.0/40.0
+5.0
-5.0
+4.0
-0.5
180
Max.
45.0
24.0
4.0
-
-
-
-
-
-
-
-
+5.5
+0.1
240
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
ESD - Human Body Model
ESD - Machine Body Model
+6.0 VDC
300 mA
+0.3 VDC
+5 dBm
-65 to +165 deg C
-55 to MTTF Table
1
MTTF Table
1
Class 1A
Class M1
(1) Channel temperature affects a device’s MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life
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