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參數資料
| 型號： | XX1001-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| 中文描述： | 18.0-21.0/36.0-42.0 GHz的砷化鎵微波單片集成電路倍增器和功率放大器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 226K |
| 代理商： | XX1001-BD |
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC
doubler integrates a doubler and 4-stage power amplifier.
The device provides better than +26.0 dBm output power
and has excellent fundamental rejection. This MMIC uses
Mimix Broadband’s 0.15 μm GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
Integrated Doubler and Power Amplifier
Excellent Saturated Output Stage
+26.0 dBm Output Power
50.0 dBc Fundamental Suppression
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Rejection
RF Input Power (RF Pin)
Output Power at 0.0 dBm Pin (Pout)
Drain Supply Voltage (Vd1) Doubler
Drain Supply Voltage (Vd2) Buffer Amp
Drain Supply Voltage (Vd3,4,5,6) PA
Gate Supply Voltage (Vg1) Doubler
Drain Supply Current (Id1) Doubler
Drain Supply Current (Id2) Buffer
Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) PA
Units
GHz
GHz
dB
dB
dBc
dBm
dBm
V
V
V
V
mA
mA
mA
Min.
18.0
36.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
TBD
12.0
50.0
0.0
+26.0
2.5
3.0
4.5
-1.2
<1.0
20
530
Max.
21.0
42.0
-
-
-
-
-
3.0
4.0
5.5
-
-
25
600
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
800 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 6
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2007 - Rev 26-Jan-07
X1001-BD
相關PDF資料 |
PDF描述 |
|---|---|
| XX1001-BD-000V | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-000W | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-EV1 | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-QK | 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm |
| XX1001-QK-0L00 | 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XX1001-BD_08 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz GaAs MMIC |
| XX1001-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-000W | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| XX1001-QK | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-21.0/36.0-42.0 GHz Doubler |
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