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參數資料
| 型號： | XX1003-QC-0N00 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 14.0-17.0/28.0-34.0 GHz Active Doubler QFN, 5x5mm |
| 中文描述： | 14000 MHz - 34000 MHz RF/MICROWAVE FREQUENCY DOUBLER |
| 封裝： | 5 X 5 MM, ROHS COMPLIANT, QFN, 32 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 180K |
| 代理商： | XX1003-QC-0N00 |
14.0-17.0/28.0-34.0 GHz Active Doubler
QFN, 5x5mm
Page 1 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2007 - Rev 22-Jan-07
X1003-QC
Mimix Broadband's 14.0-17.0/28.0-34.0 GHz SMD Active
Doubler delivers +21dBm of output power. The device
integrates a gain stage, passive doubler and driver amplifier
into a single device. The device provides better than
+21dBm of saturated output power and has over 20dB of
doubled gain with excellent harmonic rejection. The part is
designed with a self-biased architecture which requires a
single 5V supply. The device comes in a 5x5 mm QFN
surface mount package offering excellent RF and thermal
properties and is RoHS compliant. This device is well suited
for Millimeter-Wave Point-to-Point, LMDS, SATCOM and
VSAT applications.
Integrated Gain, Doubler and Driver Stages
Self-biased Architecture
+21.0 dBm Output Power
35.0 dBc Fundamental Suppression
RoHS Compliant
100% On-Wafer RF, DC and Output Power Testing
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Leakage (fin)
Third Harmonic Leakage (3 x fin)
RF Input Power (RF Pin)
Output Power at +4.0 dBm Pin (Pout)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=5.0V Typical)
Units
GHz
GHz
dB
dB
dBc
dBc
dBm
dBm
VDC
mA
Min.
14.0
28.0
-
-
-
-
-
-
-
-
Typ.
-
-
TBD
TBD
-35.0
-30.0
+4.0
+21.0
+5.0
200
Max.
17.0
34.0
-
-
-
-
-
-
+5.5
240
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
300 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
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| XX1003-QC-0N0T | 14.0-17.0/28.0-34.0 GHz Active Doubler QFN, 5x5mm |
| XX1003-QC-EV1 | 14.0-17.0/28.0-34.0 GHz Active Doubler QFN, 5x5mm |
| XX1004-BD | 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| XX1003-QC-0N0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:14.0-17.0/28.0-34.0 GHz Active Doubler QFN, 5x5mm |
| XX1003-QC-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:14.0-17.0/28.0-34.0 GHz Active Doubler QFN, 5x5mm |
| XX1004 | 制造商:UNICORP 功能描述: |
| XX1004-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
| XX1004-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
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