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參數資料
型號: μNE76118
廠商: NEC Corp.
英文描述: Low Noise Amplifier N-Channeal GaAs MES FET(低噪聲放大器N溝道MES FET)
中文描述: 低噪聲放大器蘼Channeal砷化鎵場效應晶體管(低噪聲放大器?溝道場效應晶體管)
文件頁數: 1/8頁
文件大小: 51K
代理商: ΜNE76118
DATA SHEET
GaAs MES FET
NE76118
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
1996
Document No. P11129EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan
DESCRIPTION
NE76118 is a n-channel GaAs MES FET housed in MOLD package.
FEATURES
Low noise figure
NF = 0.8 dB TYP. at f = 2 GHz
High associated gain
Ga = 13.5 dB TYP. at f = 2 GHz
Gate width : Wg = 400
P
m
4 pins super mini mold
Tape & reel packaging only available
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
NE76118-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide. Pin 3 (Source),
Pin 4 (Drain) face to perforation side of the
tape.
NE76118-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide. Pin 1 (Source),
Pin 2 (Gate) face to perforation side of the
tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GSO
V
GDO
I
D
P
tot
T
ch
T
stg
5.0
–5.0
–6.0
I
DSS
130
150
V
V
V
mA
mW
q
C
q
C
–65 to +150
PACKAGE DIMENSIONS
in millimeters
V
2.1±0.2
1.25±0.1
(
(
2
0
0
0
0
0
1
2
4
3
0
+
0
+
0
+
0
+
0
+
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
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相關代理商/技術參數
參數描述
NE76118_00 制造商:NEC 制造商全稱:NEC 功能描述:GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
NE76118-T1 功能描述:MOSFET DISC BY CEL 1/02 SOT-343 GP MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE76118-T2 制造商:NEC 制造商全稱:NEC 功能描述:GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
NE76184A 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NE76184AS 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE L TO X-BAND GaAs MESFET
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