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參數資料
| 型號： | μPA802T |
| 廠商： | NEC Corp. |
| 英文描述： | High-Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 高頻低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 45K |
| 代理商： | ΜPA802T |
SILICON TRANSISTOR
μ
PA802T
The
μ
PA802T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 12 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
A Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC4227)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA802T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA802T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
110 mW must not be exceeded in 1 element.
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
1995
PRELIMINARY DATA SHEET
Printed in J apan
Document No. ID-3636
(O.D. No. ID-9143)
Date Published April 1995 P
The information in this document is subject to change without notice.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
6
Q
1
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
X
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