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參數資料
| 型號： | μPA810TC |
| 廠商： | NEC Corp. |
| 英文描述： | NPN Silicon RF Twin Transistor(NPN射頻晶體管) |
| 中文描述： | NPN硅射頻雙晶體管（npn型射頻晶體管） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 53K |
| 代理商： | ΜPA810TC |
NPN SILICON RF TWIN TRANSISTOR
μ
PA810TC
DESCRIPTION
The
μ
PA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band
to the UHF band.
FEATURES
Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High gain: |S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
Flat-lead 6-pin thin-type ultra super minimold
Built-in 2 transistors (2
×
2SC5006)
ORDERING INFORMATION
Part Number
Package
Quantity
Supplying Form
μ
PA810TC
Flat-lead 6-pin
thin-type ultra
super minimold
Loose products
(50 pcs)
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
μ
PA810TC-T1
Taping products
(3 kp/reel)
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
μ
PA810TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
Note
200 in 1 element
230 in 2 elements
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC5006)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Printed in Japan
Document No.
Date Published November 1999 N CP(K)
P14550EJ1V0DS00 (1st edition)
1999
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
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