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參數資料
| 型號： | μPC2726T |
| 廠商： | NEC Corp. |
| 英文描述： | 1.6 GHz Different Wide Band Amplifiers(1.6 GHz 差分寬帶放大器) |
| 中文描述： | 1.6 GHz的不同的寬帶放大器（1.6千兆赫差分寬帶放大器） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 143K |
| 代理商： | ΜPC2726T |
Caution: Electro-static sensitive device
BIPOLAR NALOG NTEGRATED IRCUIT
μ
PC2726T
1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
1994
Document No. P10873EJ2V0DS00 (2nd edition)
(Previous No. IC-3125)
Date Published March 1997 N
Printed in Japan
DATA SHEET
DESCRIPTION
The
μ
PC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier.
This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement
equipment applications. This IC can also use as differential oscillator application.
The
μ
PC27
××
series is manufactured using NEC’s 20 GHz f
T
NESAT
TM
III silicon bipolar process. This process
uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from
external pollution and prevent corrosion and migration. Thus, this process can produce the ICs with excellent
performance, uniformity and reliability.
FEATURES
Wide frequency respone
f
U
= 1.6 GHz @
3 dB G
P
, V
CC
= 5 V
Power gain
G
P
= 15 dB @ 5 V
Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA
6 pin mini mold for high-density surface mounting.
ORDERING INFORMATION
PART NUMBER
PACKAGE
SUPPLYING FORM
μ
PC2726T-E3
6 pin mini mold
Embossed tape 8 mm wide. 3 kp/reel.
Pin 1, 2, 3 face to perforation side of the tape.
*
For evaluation sample order, please contact your local NEC sales office. (Part number:
μ
PC2726T)
EQUIVALENT CIRCUIT
PIN CONNECTIONS
RF OUT
RF IN
V
CC
<5>
<3>
<1>
RF OUT
RF IN
<4>
<6>
GND
<2>
3
2
1
4
5
6
(Top View)
C
4
5
6
(Bottom View)
1. INPUT
2. GND
3. OUTPUT
4. OUTPUT
5. V
CC
6. INPUT
3
2
1
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