- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄382783 > μPC8109T (NEC Corp.) 2.0 GHz Upconverter ICs FOR Cellular And Cordless Phone(用于蜂窩和無(wú)繩電話的2.0GHz 上變頻轉(zhuǎn)換器) PDF資料下載
參數(shù)資料
| 型號(hào)： | μPC8109T |
| 廠商： | NEC Corp. |
| 英文描述： | 2.0 GHz Upconverter ICs FOR Cellular And Cordless Phone(用于蜂窩和無(wú)繩電話的2.0GHz 上變頻轉(zhuǎn)換器) |
| 中文描述： | 2.0 GHz的變頻器集成電路，移動(dòng)電話和無(wú)繩電話（用于蜂窩和無(wú)繩電話的2.0GHz的上變頻轉(zhuǎn)換器） |
| 文件頁(yè)數(shù)： | 1/20頁(yè) |
| 文件大小： | 215K |
| 代理商： | ΜPC8109T |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)
1994
DATA SHEET
The
μ
PC8106T and
μ
PC8109T are silicon monolithic integrated circuits designed as upconverter series for the
transmission stage of cellular and cordless telephones. Due to operation on 3 V and mini-mold package, these
ICs contribute to produce low power consumption and physically small systems.
The
μ
PC8106T and
μ
PC8109T are manufactured using NEC’s NESAT
TM
III silicon bipolar process (f
T
= 20 GHz).
This process uses a silicon nitride passivation film and gold electrodes. These materials protect the chip’s surface,
prevent corrosion and feature the low current and high-frequency characteristics transistors. Thus, these ICs have
excellent reliability and electrical performance.
FEATURES
Recommended operating frequency
Supply voltage
High-density surface mounting possible: 6-pin mini-mold package
Low power consumption
Suppressed carrier leakage
Power-saving function
: f
RFout
= 0.4 to 2.0 GHz, f
IFin
= 100 to 400 MHz
: 2.7 to 5.5 V
: 9 mA (
μ
PC8106T), 5 mA (
μ
PC8109T)
: Double balanced mixer
APPLICATIONS
PHS, PDC, DECT
Analog cellular telephone, CT2 :
μ
PC8109T
:
μ
PC8106T
ORDERING INFORMATION
Note
To order evaluation samples please contact local NEC sales office (Order number:
μ
PC8106T or
μ
PC8109T).
2.0 GHz UPCONVERTER ICs FOR CELLULAR AND
CORDLESS TELEPHONES
BIPOLAR ANALOG INTEGRATED CIRCUITS
μ
PC8106T,
μ
PC8109T
μ
PC8106T-E3
μ
PC8109T-E3
Caution: Electro-static sensitive devices
PART NUMBER
Document No. P10656EJ2V0DS00 (2nd edition)
(Previous No. ID-3500)
Date Published October 1996 P
Printed in Japan
ARRANGEMENT
Embossed tape 8 mm wide. Pins 1, 2 and
3 facing the perforations. 3 000 units/reel.
MARKINGS
C2D
C2G
PRODUCT TYPE
High IP
3
Low power consumption
PACKAGE
6-pin mini-mold
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| μPC8108T | Mixer-oscillator IC(混合振蕩器集成電路) |
| μPC8103T | Mixer-oscillator IC(混合振蕩器集成電路) |
| μPD23C64000AL | 64M-Bit Mask-Programmble ROM(64M位掩膜可編程ROM) |
| μPD23C64000L | 64M-Bit Mask-Programmble ROM(64M位掩膜可編程ROM) |
| μPD29F008AL-X | 8 M-Bit CMOS Low Voltage Flash Memory(8M CMOS低壓閃存) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PC810A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| PC810AI | 功能描述:PHOTOCOUPLER TRAN OUT 4-SMD RoHS:否 類(lèi)別:隔離器 >> 光隔離器 - 晶體管，光電輸出 系列:- 標(biāo)準(zhǔn)包裝:100 系列:NEPOC 通道數(shù):1 輸入類(lèi)型:DC 電壓 - 隔離:5000Vrms 電流傳輸比（最小值）:130% @ 5mA 電流傳輸比（最大）:260% @ 5mA 輸出電壓:70V 電流 - 輸出 / 通道:30mA 電流 - DC 正向(If):30mA Vce飽和（最大）:300mV 輸出類(lèi)型:晶體管 安裝類(lèi)型:通孔 封裝/外殼:4-DIP（0.300"，7.62mm） 包裝:管件 |
| PC810I | 功能描述:PHOTOCOUPLER TRAN OUT 4-SMD RoHS:否 類(lèi)別:隔離器 >> 光隔離器 - 晶體管，光電輸出 系列:- 標(biāo)準(zhǔn)包裝:100 系列:NEPOC 通道數(shù):1 輸入類(lèi)型:DC 電壓 - 隔離:5000Vrms 電流傳輸比（最小值）:130% @ 5mA 電流傳輸比（最大）:260% @ 5mA 輸出電壓:70V 電流 - 輸出 / 通道:30mA 電流 - DC 正向(If):30mA Vce飽和（最大）:300mV 輸出類(lèi)型:晶體管 安裝類(lèi)型:通孔 封裝/外殼:4-DIP（0.300"，7.62mm） 包裝:管件 |
| PC81100NIP0F | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:DIP 4pin High Speed under High Load Resistance Photocoupler |
| PC81100NIZ0F | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:DIP 4pin High Speed under High Load Resistance Photocoupler |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。