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參數資料
| 型號： | μPG103B |
| 廠商： | NEC Corp. |
| 英文描述： | Wide-Band Amplifier(寬帶放大器) |
| 中文描述： | 寬帶放大器（寬帶放大器） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 41K |
| 代理商： | ΜPG103B |
1996
DATA SHEET
GaAs INTEGRATED CIRCUIT
μ
PG103B
μ
PG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers.
This device is most suitable for the microwave communication system and the measurement equipment.
FEATURES
Ultra wide band : f = 50 MHz to 3 GHz
Input/output impedance matched to 50
Hermetic sealed ceramic package assures high reliability
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PG103B
T-31, 8 PIN CERAMIC
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain Voltage
Gate Voltage
Input Voltage
Input Power
Total Power Dissipation*
Operating Case Temperature
Storage Temperature
* T
C
≤
125 C
V
DD
V
GG
V
in
P
in
P
tot
T
opt
T
stg
+8
–8
V
V
V
–3 to +0.6
+15
1.5
–65 to +125
–65 to +175
dBm
W
C
C
RECOMMENDED OPERATING CONDITIONS (T
A
= 25 C)
Drain Voltage
Gate Voltage
Operating Case Temperature
V
DD
V
GG
T
opt
+5.0
±
0.5
–5.0
±
0.5
–50 to +80
V
V
C
Document No. P11342EJ1V0DS00 (1st edition)
Date Published March 1996 P
Printed in Japan
WIDE-BAND AMPLIFIER
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