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參數資料
型號: μPG155TB
廠商: NEC Corp.
英文描述: L-Band SPDT Switch(單刀雙擲開關)
中文描述: L波段單刀雙擲開關(單刀雙擲開關)
文件頁數: 1/12頁
文件大小: 68K
代理商: ΜPG155TB
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GaAs INTEGRATED CIRCUIT
μ
PG155TB
L-BAND SPDT SWITCH
Document No. P13654EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
The mark
shows major revised points.
1998, 1999
DESCRIPTION
The
μ
PG155TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low
insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy
to install and contributes to miniaturizing the system.
FEATURES
Low Insertion Loss
High Linearity Switching: P
in (1 dB)
= +34 dBm TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
Small 6-pin super minimold package (Size: 2.0
×
1.25
×
0.9 mm)
: L
INS
= 0.75 dB TYP. @V
CONT
= +3.0 V/0 V, f = 2 GHz
APPLICATIONS
L, S-band digital cellular or cordless telephone
PCS, WLAN, and WLL applications
ORDERING INFORMATION
Part Number
Marking
Package
Supplying Form
μ
PG155TB-E3
G1L
6-pin super minimold
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
μ
PG155TB)
Caution
The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
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