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參數資料
| 型號： | 0104-100 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 55JT, 8 PIN |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 0104-100 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0104-100
100 Watts, 28 Volts, Class AB
Defcom 100 - 400
MHz
GENERAL DESCRIPTION
The 0104-100 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 100-400 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55JT, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
270 Watts
o
Maximum Voltage and Current
BVces
Collector to Emiter Voltage
60 Volts
BVebo
Emitter to Base Voltage
4.0 Volts
Ic
Collector Current
16 A
Maximum Temperatures
Storage Temperature
- 65 to +150 C
o
Operating Junction Temperature
+150 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 400 MHz
Vcc = 28 Volts
100
7.0
8.0
50
20
5:1
Watts
dB
%
BVebo
1
BVces
1
BVceo
1
Cob
1
h
FE
1
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 100 mA
Ie = 100 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 1 A
4.0
60
32
20
70
0.65
Volts
pF
C/W
o
Note 1: per side
Issue August 1996
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