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參數資料
| 型號： | 0150SC-1250M |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | SiC VHF: 160MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1250; P(in) (W): 190; Gain (dB): 9; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, JFET |
| 封裝： | CASE 55KT, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 313K |
| 代理商： | 0150SC-1250M |
0150SC-1250M Rev B
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our
web site at www.microsemi..com or contact our factory direct.
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON
CARBIDE
STATIC
INDUCTION
TRANSISTOR
(SIT)
capable of
providing 1250 Watts minimum of RF power from 150 to 160 MHz. The
transistor is designed for use in High Power Amplifiers supporting applications
such as VHF Weather Radar and Long Range Tracking Radar. The device is
the first in a series of High Power Silicon Carbide Transistors from
Microsemi PPG.
CASE OUTLINE
55KT FET
(Common Gate)
See outline drawing
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
250 V
Gate-Source (VGS)
- 1V
Drain Current (Idg)
35A
Temperatures
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+250
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Idss1
Drain-Source Leakage Current
VGS = -15V, VDG = 95V
750
A
Igss
Gate-Source Leakage Current
VGS = -20V, VDS = 0V
50
A
θJC
1
Thermal Resistance
Pout=1250W
0.15
C/W
FUNCTIONAL CHARACTERISTICS @ 25
°C, Vdd = 125V, I
dq(avg) = 500 mA, Freq = 155 MHz,
GPG
Common Gate Power Gain
Pout = 1250 W, Pulsed
9.0
9.5
dB
Pin
Input Power
Pulse Width = 300us, DF = 10%
150
160
W
ηd
Drain Efficiency
F = 155 MHz, Pout =1250W
60
%
ψ
Load Mismatch
F = 155 MHz, Pout = 1250W
10:1
Po +1dB
Power Output – Higher Drive
F = 155 MHz, Pin = 190 W
1400
W
Vsg
Source-Gate Voltage
Set for Idq(avg) = 500 mA
3.0
10.0
Volts
Dec 2008
0150SC-1250M
1250Watts, 125 Volts, Class AB
150 to 160 MHz
Silicon Carbide SIT
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