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參數資料
| 型號： | 015AZ13-Y |
| 元件分類： | 齊納二極管 |
| 英文描述： | 13.225 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | ESC, 1-1G1A, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 496K |
| 代理商： | 015AZ13-Y |
015AZ2.0~015AZ24
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ24
Constant-Voltage Regulation Applications
Small package
Nominal voltage tolerance of about ±2.5%
(2.0 V~24 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
Pad dimensions of 4 × 4 mm.
Electrical Characteristics
(See pages 2~3.)
Marking
Example 1: 015AZ2.4-X
Example 2: 015AZ2.4-Z
Example 3: 015AZ12-X
Pin Assignment (Top View)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
24
Decimal point
Voltage rank
: VZ = (VZ ranking voltage) X 0.1, nil: VZ = VZ ranking
24
12
VZ additional ranking
upper --- X rank , middle --- Y rank , lower --- Z rank
相關PDF資料 |
PDF描述 |
|---|---|
| 015AZ10-Y | 9.995 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 015AZ3.3-X | 3.225 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 015AZ3.3-Z | 3.375 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 015AZ9.1-X | 8.75 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 015AZ22-Y | 22.02 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 015AZ15-X(TH3,F,T) | 功能描述:穩壓二極管 15V 150mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 015AZ16-X(TH3,F,T) | 功能描述:穩壓二極管 16V 150mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 015AZ18-X(TH3,F,T) | 功能描述:穩壓二極管 18V 150mW RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 015AZ2 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Diode Silicon Epitaxial Planar Type |
| 015AZ2.0 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type |
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