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參數資料
| 型號： | 0405SC-2200M |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, SiC, N-CHANNEL, RF POWER, JFET |
| 封裝： | 55TW-FET, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 228K |
| 代理商： | 0405SC-2200M |
0405SC-2200M Rev A1
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE
Class
AB
SILICON
CARBIDE
(SiC)
STATIC
INDUCTION
TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from
406 to 450 MHz. The transistor is designed for use in High Power Amplifiers
supporting applications such as UHF Weather Radar and Long Range Tracking
Radar.
The device is an addition to the series of High Power Silicon
Carbide Transistors from Microsemi RF IS.
CASE OUTLINE
55TW-FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
250V
Gate-Source (VGS)
-1V
Temperatures
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+250
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Idss
Drain-Source Leakage Current
VGS = -20V, VDG= 125V
750
A
Igss
Gate-Source Leakage Current
VGS = -20V, VDS = 0V
50
A
θJC
1
Thermal Resistance
0.15
C/W
FUNCTIONAL CHARACTERISTICS @ 25
°C, Vdd = 125V, I
dq(ave) = 120 mA, Freq = 406, 425, 450 MHz,
GPG
Common Gate Power Gain
Pout = 2200 W, Pulsed
7.0
7.5
dB
Pin
Input Power
Pulse Width = 300us, DF = 6%
390
440
W
ηd
Drain Efficiency
F = 450 MHz, Pout =2200W
50
55
%
ψ
Load Mismatch
F = 420 MHz, Pout = 2200W
10:1
Po +1dB
Power Output – Higher Drive
F = 450 MHz, Pin = 490 W
2450
W
Vgs
Gate source Voltage
Set for Idq(ave) = 120mA
3.0
10.0
Volts
Rev A1
May 2010
0405SC-2200M
2200Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
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相關代理商/技術參數 |
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|---|---|
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