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參數資料
| 型號： | 0510-50A |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 3.7AI（丙）|的SOT - 324VAR |
| 文件頁數： | 1/3頁 |
| 文件大小： | 155K |
| 代理商： | 0510-50A |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0510-10
10 Watts, 28 Volts, Class AB
Milcom 500 - 1000
MHz
GENERAL DESCRIPTION
The 0510-10 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 500-1000 MHz frequency band.
It may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55CT, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
30 Watts
o
Maximum Voltage and Current
BVces
Collector to Emiter Voltage
50 Volts
BVebo
Emitter to Base Voltage
4.0 Volts
Ic
Collector Current
1.0 A
Maximum Temperatures
Storage Temperature
- 65 to +150 C
o
Operating Junction Temperature
+200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 1000 MHz
Vcc = 28 Volts
10
50
1.5
0.8
3:1
Watts
dB
%
BVebo
BVces
BVceo
BVcbo
Icbo
Cob
h
FE
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Collector to Base Current
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 50 mA
Ie = 50 mA
Ic = __ mA
Vc = __ Volts
Vcb = 28 V, F = 1
MHz
Vce = 5 V, Ic = 200
mA
4.0
50
29
10
11
60
Volts
mA
pF
C/W
o
Initial Issue June, 1994
相關PDF資料 |
PDF描述 |
|---|---|
| 0510-50A | 500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2 |
| 0510-50A | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 05102GOF | Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 200; |
| 05104GOF | Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 400; |
| 05106GOF | Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 600; |
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