- 您現在的位置：買賣IC網 > PDF目錄24689 > 05E3 (RECTRON LTD) 0.5 A, 150 V, SILICON, SIGNAL DIODE PDF資料下載
參數資料
| 型號： | 05E3 |
| 廠商： | RECTRON LTD |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.5 A, 150 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 35K |
| 代理商： | 05E3 |
SURFACE MOUNT SUPER FAST RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 0.5 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* High reliability
* Low leakage
* Low forward voltage
* High current capability
* Super fast switching speed
* High surge capability
* Good for switching mode circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
05E1
THRU
05E6
SOD-123F
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
MECHANICALDATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.016 gram
2006-3
REV:B
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55
oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
CJ
TJ, TSTG
VRMS
Volts
Amps
0.5
15
-55 to + 150
Amps
pF
0 C
UNITS
05E1
05E4
05E2
05E5
05E6
05E3
50
200
100
300
400
150
35
140
70
210
280
105
50
200
100
300
400
150
10
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 1)
VF
SYMBOL
IR
trr
UNITS
0.95
5.0
uAmps
nSec
Maximum DC Reverse Current
Maximum Forward Voltage at 0.5A DC
Volts
@TA = 25
oC
@TA =100
o C
05E1
05E4
05E2
05E5
05E6
05E3
1.25
100
35
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
.150 (3.8)
.142 (3.6)
.
035 (0.90)
.028 (0.70)
.053 (1.35)
.047 (1.20)
.077 (1.95)
.069 (1.75)
.030 (0.75)
.022 (0.55)
.
008 (0.20)
.114 (2.9)
.106 (2.7)
相關PDF資料 |
PDF描述 |
|---|---|
| 05E2 | 0.5 A, 100 V, SILICON, SIGNAL DIODE |
| 05E2-W | 0.5 A, 100 V, SILICON, SIGNAL DIODE |
| 934042530125 | 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934042530135 | 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934042530115 | 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 05E330GODR | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 05E330GPDP | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 05E360G0DR | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 05E360GPDM | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 05E360J0DM | 制造商: 功能描述: 制造商:undefined 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。