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參數(shù)資料
| 型號： | 0724_XP132A1275SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 158K |
| 代理商： | 0724_XP132A1275SR |
11
735
Ta=25OC
SYMBOL
RATINGS
UNITS
Vdss
-20
V
Vgss
12
V
Id
-5
A
Idp
-20
A
Idr
-5
A
Pd
2.5
W
Tch
150
O
C
Tstg
-55 ~ 150
O
C
( note ) : When implemented on a glass epoxy PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PARAMETER
+
NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.075 (max)
NUltra High-Speed Switching
NSOP-8 Package
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
The XP132A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.075
( Vgs = -4.5V )
: Rds (on) = 0.115
( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting : SOP-8
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