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參數資料
| 型號： | 1.5KA13AHE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 1.5KA, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 314K |
| 代理商： | 1.5KA13AHE3 |
1.5KA6.8 thru 1.5KA47A
Document Number 88300
16-Aug-05
Vishay Semiconductors
www.vishay.com
1
* Patent #'s
4,980,315
5,166,769
5,278,094
Pa
ten
ted
*
Case Style 1.5KA
Automotive Transient Voltage Suppressors
High Temperature Stability & High
Reliability Conditions
Major Ratings and Characteristics
V(BR)
6.8 V to 47 V
PPPM
1500 W
PD
5.0 W
IFSM
200 A
Tj max.
185 °C
Features
Patented PAR construction
Available in Unidirectional polarity only
1500 W peak pulse power capability with a
10/1000 s waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Typical ID less than 1.0 A above 15 V rating
Solder Dip 260 °C, 40 seconds
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
Telecommunication
Mechanical Data
Case: Molded plastic body over passivated junction
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C, unless otherwise noted)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Parameter
Symbol
Limit
Unit
Peak pulse power dissipation with a 10/1000
μs waveform(1) (Fig. 1)
PPPM
Minimum 1500
W
Peak pulse current at TA = 25 °C with a 10/1000 μs waveform
(1)(Fig. 3)
IPPM
See Next Table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
5.0
W
Peak forward surge current 8.3 ms single half sine-wave(2)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A(2)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 185
°C
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