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參數資料
| 型號： | 100B1R8BW |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 711K |
| 代理商： | 100B1R8BW |
MW4IC2230NBR1 MW4IC2230GNBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W-CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi-stage structure. Its
wideband on-chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W-CDMA.
Final Application
Typical Single-Carrier W-CDMA Performance:
V
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = -45 dBc in 3.84 MHz Bandwidth
Driver Application
Typical Single-Carrier W-CDMA Performance:
V
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = -53.5 dBc in 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 10 mW to 5 W CW
P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
200
°
C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(Top View)
GND
V
DS2
V
RD1
V
RG1
V
DS1
RF
in
V
GS1
V
GS2
V
GS3
GND
GND
V
DS3/
RF
out
GND
Quiescent Current
Temperature Compensation
3 Stages I
C
V
GS1
V
GS2
V
GS3
RF
in
V
DS2
V
DS1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
V
DS3
/RF
out
1
Note: Exposed backside flag is source
terminal for transistors.
V
RD1
V
RG1
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MW4IC2230N
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
2110-2170 MHz, 30 W, 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW4IC2230NBR1
MW4IC2230NBR1
MW4IC2230GNBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW4IC2230GNBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 100B1R8BW500XT | 功能描述:多層陶瓷電容器MLCC - SMD/SMT 500volts 1.8pF RoHS:否 制造商:American Technical Ceramics (ATC) 電容:10 pF 容差:1 % 電壓額定值:250 V 溫度系數/代碼:C0G (NP0) 外殼代碼 - in:0505 外殼代碼 - mm:1414 工作溫度范圍:- 55 C to + 125 C 產品:Low ESR MLCCs 封裝:Reel |
| 100B1R8CP500X | 制造商:American Technical Ceramics (ATC) 功能描述:CERAMIC MULTILAYER CAPACITOR (P90 & NP0) |
| 100B1R8CT500XT | 功能描述:多層陶瓷電容器MLCC - SMD/SMT 500volts 1.8pF RoHS:否 制造商:American Technical Ceramics (ATC) 電容:10 pF 容差:1 % 電壓額定值:250 V 溫度系數/代碼:C0G (NP0) 外殼代碼 - in:0505 外殼代碼 - mm:1414 工作溫度范圍:- 55 C to + 125 C 產品:Low ESR MLCCs 封裝:Reel |
| 100B1R8CW500X | 制造商:American Technical Ceramics Corp 功能描述:CERAMIC MULTILAYER CAPACITOR (P90 & NP0) |
| 100B1R8CW500XT | 功能描述:多層陶瓷電容器MLCC - SMD/SMT 500volts 1.8pF RoHS:否 制造商:American Technical Ceramics (ATC) 電容:10 pF 容差:1 % 電壓額定值:250 V 溫度系數/代碼:C0G (NP0) 外殼代碼 - in:0505 外殼代碼 - mm:1414 工作溫度范圍:- 55 C to + 125 C 產品:Low ESR MLCCs 封裝:Reel |
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