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參數資料
| 型號： | 1035MP |
| 英文描述： | TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2.5A I(C) | FO-58 |
| 中文描述： | 晶體管|晶體管|叩| 65V的五（巴西）總裁| 2.5AI（丙）|佛58 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 23K |
| 代理商： | 1035MP |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1035 MP
35 Watt, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1035 MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55FU, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 125 Watts Pk
2
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 2.5 Amps Pk
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10
μ
sec
DF = 1%
F = 1090 MHz
35
10
10.5
45
3.5
10:1
Watts
Watts
dB
%
BVebo
BVces
Hfe
Cob
θ
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain to Emitter
Output Capacitance
Thermal Resistance
Ie = 5 mA
Ic = 15mA
Vce = 5V, Ic = 100 mA
Vcb = 50 V, f = 1 MHz
Pulsed
3.5
65
20
17
20
1.4
Volts
Volts
pF
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue December 6, 1995
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