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參數資料
| 型號： | 105000 |
| 英文描述： | ABSCHLUSSPL.WAP BEIGE 2.5-10 |
| 中文描述： | ABSCHLUSSPL.WAP米黃2.5-10 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 207K |
| 代理商： | 105000 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
10500
500 Watts, 50 Volts, Pulsed
Avionics 1030 / 1090 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 10500 is a high power COMMON BASE BiPolar transistor. It is
designed for pulsed systems in the frequency band 1025 - 1150 MHz, with the
pulse width and duty required for MODE-S, TACAN & TCAS applications.
The device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
55ST Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
1700 Watts
o2
Maximum Voltage and Current
BVces
Collector to Base Voltage
65 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
40 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 230 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Power Input
Vcc = 50 Volts
70
Watts
Pg
η
c
Pd
VSWR
Power Out
F = 1090 MHz
500
Watts
Power Gain
8.5
dB
Collector Efficiency
50
%
Pulse Droop
0.5
dB
Load Mismatch Tolerance
4:1
PW = 32
sec
DF = 2%
F = 1090 MHz
BVebo*
BVces
Collector to Emitter Breakdown
Ic = 100 mA
65
Volts
h
*
FE
θjc1
Emitter to Base Breakdown
Ie = 50 mA
3.5
Volts
DC - Current Gain
Ic = 5 A, Vce = 5 V
20
Thermal Resistance
0.12
C/W
o
Note 1: At rated output power and pulse conditions
*: Not measurable due to internal EB returns
Issue C, November 3, 1997
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