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參數資料
| 型號： | 10A06 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Coaxial Cable; Coaxial RG/U Type:62; Impedance:93ohm; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:FEP; Conductor Material:Steel; Jacket Color:Natural; Leaded Process Compatible:Yes; Number of Conductors:1 RoHS Compliant: Yes |
| 中文描述： | 10 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, R-6, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 56K |
| 代理商： | 10A06 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
10A060
6 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10A060 is a COMMON EMITTER transistor capable of providing 6
Watts of Class A, RF output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55FT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 21 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
VSWR
Power Out
Power Input
Power Gain
Load Mismatch Tolerance
F = 1 GHz
Ic = 880 mA
Vcc = 20 Volts
6.0
8.0
8.5
0.95
10:1
Watts
Watts
dB
BVebo
BVces
BVceo
h
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 4 mA
Ic = 40 mA
Ic = 40 mA
Vce = 5 V, Ic = 400 mA
Vcb = 28 V, f = 1 MHz
3.5
50
24
20
10.8
6.0
8.3
Volts
Volts
Volts
pF
C/W
o
Issue February 1996
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 10A060 | 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS BIPO 55FT-2 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 10A06-T | 功能描述:整流器 10A 800V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 10A06-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode 800V 10A 2-Pin Case R-6 T/R |
| 10A07 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:10 Amp Rectifier 50 to 1000 Volts |
| 10A07-T | 功能描述:整流器 10A 1000V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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