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參數資料
| 型號： | 10A10-T3 |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 10A STANDARD DIODE |
| 中文描述： | 10A條標準二極管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 10A10-T3 |
10A05 – 10A10
1 of 4 2006 Won-Top Electronics
Pb
10A05 – 10A10
10A STANDARD DIODE
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
C
!
Case: P-600, Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 2.1 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
10A05
10A1
10A2
10A4
10A6
10A8
10A10
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1) @T
A
= 50°C
I
O
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
600
A
Forward Voltage @I
F
= 10A
V
FM
1.0
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
100
μA
Typical Junction Capacitance (Note 2)
C
j
150
80
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
10
°C/W
Operating Temperature Range
T
j
-50 to +150
°C
Storage Temperature Range
T
STG
-50 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
P-600
Min
25.4
8.60
1.20
8.60
Dim
A
B
C
D
Max
—
9.10
1.30
9.10
All Dimensions in mm
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