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參數資料
| 型號： | 10GD120DN2E |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 244K |
| 代理商： | 10GD120DN2E |
1
Oct-30-1997
BSM 10 GD 120 DN2
IGBT Power Module
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
BSM 10 GD 120 DN2
BSM 10 GD120DN2E3224
V
CE
1200V 15A
1200V 15A
I
C
Package
ECONOPACK 2
ECONOPACK 2K
Ordering Code
C67076-A2513-A67
C67070-A2513-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
± 20
V
GE
I
C
10
15
A
I
Cpuls
20
30
P
tot
80
+ 150
-40 ... + 125
W
T
j
T
stg
°C
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
thJC
R
thJC
D
V
is
-
-
-
-
≤
1.52
≤
2
2500
16
11
F
40 / 125 / 56
K/W
Vac
mm
sec
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