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參數資料
| 型號： | 111RIA40 |
| 英文描述： | 400V 110A Phase Control SCR in a TO-209AC (TO-94) package |
| 中文描述： | 400V已廢除相位控制晶閘管采用TO - 209AC（到94）封裝 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 103K |
| 代理商： | 111RIA40 |
111RIA Series
3
Bulletin I25204 01/01
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J = TJ max. linear to 80% rated VDRM
Parameter
111RIA
Units Conditions
20
mA
T
J = TJ max, rated VDRM/VRRM applied
P
GM
Maximum peak gate power
12
T
J = TJ max, t
p ≤ 5ms
P
G(AV)
Maximum average gate power
3.0
T
J = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J = TJ max, t
p ≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J = - 40°C
to trigger
mA
T
J =
25°C
T
J = 140°C
V
GT
DC gate voltage required
T
J = - 40°C
to trigger
V
T
J =
25°C
T
J = 140°C
I
GD
DC gate current not to trigger
6.0
mA
Parameter
111RIA
Units Conditions
20
10
Triggering
T
J = TJ max
TYP.
MAX.
180
-
80
120
40
-
2.5
-
1.6
2
1-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VT
J = TJ max, t
p ≤ 5ms
T
J
Max. operating temperature range
-40 to 140
Tstg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
15.5
Non lubricated threads
(137)
14
Lubricated threads
(120)
wt
Approximate weight
130
g
Parameter
111RIA
Units Conditions
0.27
DC operation
0.1
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in)
Case style
TO - 209AC (TO-94)
See Outline Table
V
GD
DC gate voltage not to trigger
0.25
V
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